IRF8721TRPBF, транзистор полевой n-канальный 30в 14а 2.5вт
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MOSFET N-CH 30V 14A 8-SOIC
Транзистор полевой N-канальный 30В 14А 2.5Вт
Транзистор полевой N-канальный 30В 14А 2.5Вт
Производитель:
Infineon Technologies
Артикул:
IRF8721TRPBF
Документы:
Описание IRF8721TRPBF
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
| Maximum Operating Temperature | +150 °C |
| Maximum Continuous Drain Current | 14 A |
| Package Type | SOIC |
| Maximum Power Dissipation | 2.5 W |
| Mounting Type | Surface Mount |
| Width | 4mm |
| Forward Transconductance | 27s |
| Height | 1.5mm |
| Dimensions | 5 x 4 x 1.5mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Length | 5mm |
| Transistor Configuration | Single |
| Typical Turn-On Delay Time | 8.2 ns |
| Brand | Infineon |
| Typical Turn-Off Delay Time | 8.1 ns |
| Series | HEXFET |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 2.35V |
| Minimum Gate Threshold Voltage | 1.35V |
| Maximum Drain Source Resistance | 12.5 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Pin Count | 8 |
| Category | Power MOSFET |
| Typical Gate Charge @ Vgs | 8.3 nC @ 4.5 V |
| Channel Mode | Enhancement |
| Typical Input Capacitance @ Vds | 1040 pF @ 15 V |
| Channel Type | N |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Forward Diode Voltage | 1V |
| Вес, г | 0.15 |
Полные аналоги
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IRF8721PBF MOSFET N-CH 30V 14A 8-SOICINFSO-8
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