IPP032N06N3GXKSA1, Транзистор полевой N-канальный 60В 120A 188Вт 3-Pin(3+Tab) TO-220 туба, CoolMOS
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MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube
Транзистор полевой N-канальный 60В 120A 188Вт 3-Pin(3+Tab) TO-220 туба, CoolMOS
Транзистор полевой N-канальный 60В 120A 188Вт 3-Pin(3+Tab) TO-220 туба, CoolMOS
Производитель:
Infineon Technologies
Артикул:
IPP032N06N3GXKSA1
Документы:
Описание IPP032N06N3GXKSA1
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Length | 10.36mm |
| Transistor Configuration | Single |
| Brand | Infineon |
| Maximum Continuous Drain Current | 120 A |
| Package Type | TO-220 |
| Maximum Power Dissipation | 188 W |
| Series | OptiMOS 3 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | -55 °C |
| Width | 4.57mm |
| Maximum Gate Threshold Voltage | 4V |
| Height | 15.95mm |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 3.2 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Pin Count | 3 |
| Typical Gate Charge @ Vgs | 124 nC @ 10 V |
| Transistor Material | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Forward Diode Voltage | 1.2V |
| Вес, г | 2.5 |
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