IRLR6225TRPBF, Транзистор полевой 20В 100A 4.0мОм 2.5В
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MOSFET, 20V, 100A, 4.0 MOHM, 2.5V DRIVE CAPABLE
Транзистор полевой 20В 100A 4.0мОм 2.5В
Транзистор полевой 20В 100A 4.0мОм 2.5В
Производитель:
Infineon Technologies
Артикул:
IRLR6225TRPBF
Документы:
Технические параметры
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КорпусDPAK/TO-252AA
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Тип упаковкиTape and Reel (лента в катушке)
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Нормоупаковка2000 шт
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Вес брутто0.4 г.
Описание IRLR6225TRPBF
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
| Maximum Operating Temperature | +150 °C |
| Maximum Continuous Drain Current | 100 A |
| Package Type | DPAK (TO-252) |
| Maximum Power Dissipation | 63 W |
| Mounting Type | Surface Mount |
| Width | 7.49mm |
| Forward Transconductance | 205s |
| Height | 2.39mm |
| Dimensions | 6.73 x 7.49 x 2.39mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Length | 6.73mm |
| Transistor Configuration | Single |
| Typical Turn-On Delay Time | 9.7 ns |
| Brand | Infineon |
| Typical Turn-Off Delay Time | 63 ns |
| Series | HEXFET |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 1.1V |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Drain Source Resistance | 5.2 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Pin Count | 3 |
| Category | Power MOSFET |
| Typical Gate Charge @ Vgs | 48 nC @ 4.5 V |
| Channel Mode | Enhancement |
| Typical Input Capacitance @ Vds | 3770 pF @ 10 V |
| Channel Type | N |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Forward Diode Voltage | 1.2V |
| Вес, г | 0.4 |
Полные аналоги
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IRLR6225PBF MOSFET, 20V, 100A, 4.0 MOHM, 2.5V DRIVE CAPABLEINFDPAK/TO-252AA
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