IGW25T120FKSA1, Транзистор IGBT Chip N-CH 1200В 25А 190Вт [PG-TO-247-3]
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Транзистор IGBT Chip N-CH 1200В 25А 190Вт [PG-TO-247-3]
Производитель:
Infineon Technologies
Артикул:
IGW25T120FKSA1
Технические параметры
-
Нормоупаковка30 шт
Описание IGW25T120FKSA1
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
| Maximum Operating Temperature | +150 °C |
| Length | 16.13mm |
| Transistor Configuration | Single |
| Brand | Infineon |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 50 A |
| Package Type | TO-247 |
| Maximum Power Dissipation | 190 W |
| Energy Rating | 7mJ |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | -40 °C |
| Width | 5.21mm |
| Height | 21.1mm |
| Pin Count | 3 |
| Dimensions | 16.13 x 5.21 x 21.1mm |
| Maximum Gate Emitter Voltage | ±20V |
| Channel Type | N |
| Gate Capacitance | 1860pF |
| Вес, г | 7.5 |
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